Rohm Semiconductor
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2SD1963T100S
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2SD1963T100S

Product Overview

Category

The 2SD1963T100S belongs to the category of semiconductor devices.

Use

It is commonly used as a power transistor in electronic circuits.

Characteristics

  • High voltage capability
  • Low collector-emitter saturation voltage
  • Fast switching speed

Package

The 2SD1963T100S is typically available in a TO-220 package.

Essence

This product is essential for amplifying and controlling electrical signals in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Maximum Collector-Emitter Voltage: [Insert value]
  • Maximum Collector Current: [Insert value]
  • Power Dissipation: [Insert value]
  • Transition Frequency: [Insert value]

Detailed Pin Configuration

The 2SD1963T100S typically consists of three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High voltage amplification
  • Fast switching capabilities
  • Low power dissipation

Advantages

  • Suitable for high voltage applications
  • Low saturation voltage
  • Reliable performance

Disadvantages

  • May require heat sinking in high-power applications
  • Sensitive to overvoltage conditions

Working Principles

The 2SD1963T100S operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal.

Detailed Application Field Plans

This product is widely used in audio amplifiers, power supplies, motor control circuits, and other electronic systems requiring high-voltage switching and amplification.

Detailed and Complete Alternative Models

  • 2SD882
  • 2N3055
  • MJ15003

In conclusion, the 2SD1963T100S is a versatile power transistor with high voltage capability, fast switching speed, and low saturation voltage, making it suitable for a wide range of electronic applications.

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기술 솔루션에 2SD1963T100S 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum collector current of 2SD1963T100S?

    • The maximum collector current of 2SD1963T100S is 3A.

  2. What is the maximum collector-emitter voltage of 2SD1963T100S?

    • The maximum collector-emitter voltage of 2SD1963T100S is 100V.

  3. What is the typical hFE (DC current gain) of 2SD1963T100S?

    • The typical hFE of 2SD1963T100S is 60 to 320.

  4. What are the typical applications of 2SD1963T100S?

    • 2SD1963T100S is commonly used in audio amplifiers, power management circuits, and general switching applications.

  5. What is the power dissipation of 2SD1963T100S?

    • The power dissipation of 2SD1963T100S is 1.25W.

  6. Is 2SD1963T100S suitable for high-frequency applications?

    • No, 2SD1963T100S is not recommended for high-frequency applications due to its characteristics.

  7. Does 2SD1963T100S require a heat sink for operation?

    • It is recommended to use a heat sink when operating 2SD1963T100S near its maximum power dissipation to ensure proper thermal management.

  8. What are the key differences between 2SD1963T100S and similar transistors?

    • The key differences include maximum ratings, hFE range, and package type.

  9. Can 2SD1963T100S be used in automotive applications?

    • Yes, 2SD1963T100S can be used in automotive applications where its specifications meet the requirements.

  10. Are there any specific layout considerations when using 2SD1963T100S in a circuit?

    • It is important to minimize lead lengths and provide adequate PCB traces for proper thermal and electrical performance when using 2SD1963T100S in a circuit.