BR24G64F-3GTE2

Product Overview

Category

The BR24G64F-3GTE2 belongs to the category of non-volatile memory devices.

Use

It is primarily used for data storage and retrieval in various electronic systems.

Characteristics

• Non-volatile: Retains stored data even when power is turned off.
• High capacity: The BR24G64F-3GTE2 has a storage capacity of 64 kilobits.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• High-speed operation: Offers fast read and write access times.
• Robust design: Can withstand harsh environmental conditions.
• Easy integration: Compatible with standard serial interface protocols.

Package

The BR24G64F-3GTE2 is available in a compact SOP-8 package.

Essence

This product is an EEPROM (Electrically Erasable Programmable Read-Only Memory) chip that provides non-volatile storage capabilities.

Packaging/Quantity

The BR24G64F-3GTE2 is typically packaged in reels containing a quantity of 2500 units.

Specifications

• Storage Capacity: 64 kilobits
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 100 years (at 55°C)
• Write Endurance: 1 million cycles

Detailed Pin Configuration

The BR24G64F-3GTE2 features an SOP-8 package with the following pin configuration:

1. VSS: Ground
2. SDA: Serial Data Input/Output
3. SCL: Serial Clock Input
4. WP: Write Protect
5. VCC: Power Supply
6. NC: No Connection
7. NC: No Connection
8. VSS: Ground

Functional Features

• Random access: Allows for reading and writing data at any memory location.
• Byte-level operations: Supports individual byte read and write operations.
• Hardware write protection: The WP pin can be used to protect the memory from accidental writes.
• Page write mode: Enables faster data writes by allowing multiple bytes to be written in a single operation.
• Software write protection: Can be enabled through specific commands to prevent unauthorized modifications.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High-speed operation enables quick data access.
• Low power consumption makes it suitable for battery-powered devices.
• Robust design withstands harsh environmental conditions.
• Easy integration with standard serial interface protocols.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per bit of storage compared to some alternatives.

Working Principles

The BR24G64F-3GTE2 utilizes EEPROM technology, which allows for electrically erasing and reprogramming of data. It stores information in a grid of memory cells that can be individually addressed and modified using electrical signals. The stored data remains intact even when power is removed.

Detailed Application Field Plans

The BR24G64F-3GTE2 finds applications in various electronic systems, including but not limited to: - Consumer electronics (e.g., TVs, audio players) - Automotive systems (e.g., infotainment, engine control units) - Industrial automation (e.g., PLCs, motor drives) - Medical devices (e.g., patient monitoring systems) - Smart meters and energy management systems

Detailed and Complete Alternative Models

1. AT24C64: A similar EEPROM chip manufactured by Atmel Corporation.
2. CAT24C64: An alternative EEPROM chip produced by ON Semiconductor.
3. M24C64: Another EEPROM option manufactured by STMicroelectronics.

These alternative models offer similar functionality and can be considered as substitutes for the BR24G64F-3GTE2.

In conclusion, the BR24G64F-3GTE2 is a non-volatile memory device with a storage capacity of 64 kilobits. It offers high-speed operation, low power consumption, and robust design. The chip finds applications in various electronic systems and has alternatives available from different manufacturers.