BU30TA2WNVX-TR

Product Overview

Category: Electronic Component
Use: Power Transistor
Characteristics: High voltage, high current, low saturation voltage
Package: TO-220AB
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Tape and Reel / 1000 pieces per reel

Specifications

• Collector-Base Voltage (Vcbo): 400V
• Collector-Emitter Voltage (Vceo): 300V
• Emitter-Base Voltage (Vebo): 5V
• Continuous Collector Current (Ic): 3A
• Total Power Dissipation (Pd): 40W
• Transition Frequency (fT): 20MHz
• Collector-Emitter Saturation Voltage (Vce(sat)): 1.5V @ Ic = 3A, Ib = 0.3A
• Base-Emitter Saturation Voltage (Vbe(sat)): 1.2V @ Ic = 3A, Ib = 0.3A

Detailed Pin Configuration

The BU30TA2WNVX-TR transistor has three pins:

1. Collector (C)
2. Base (B)
3. Emitter (E)

Functional Features

• High voltage capability allows for use in various power applications.
• High current handling capacity makes it suitable for demanding circuits.
• Low saturation voltage reduces power dissipation and improves efficiency.

Advantages and Disadvantages

Advantages: - High voltage and current ratings - Low saturation voltage - Suitable for power applications

Disadvantages: - Limited transition frequency compared to some other models - Relatively higher base-emitter saturation voltage

Working Principles

The BU30TA2WNVX-TR is an NPN silicon epitaxial planar transistor. It operates based on the principles of bipolar junction transistors (BJTs). When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This allows for amplification and switching functions in electronic circuits.

Detailed Application Field Plans

The BU30TA2WNVX-TR transistor finds applications in various fields, including:

1. Power supply units
2. Motor control circuits
3. Audio amplifiers
4. Lighting systems
5. Switching regulators

Detailed and Complete Alternative Models

1. BU508DFI - NPN Silicon Power Transistor, TO-220AB package, 700V Vceo, 8A Ic
2. MJE3055T - NPN Power Transistor, TO-220 package, 60V Vceo, 10A Ic
3. 2N3055 - NPN Power Transistor, TO-3 package, 60V Vceo, 15A Ic
4. TIP31C - NPN Power Transistor, TO-220 package, 100V Vceo, 3A Ic
5. BD139 - NPN Epitaxial Silicon Transistor, TO-126 package, 80V Vceo, 1.5A Ic

These alternative models offer similar functionalities and can be used as substitutes for the BU30TA2WNVX-TR transistor in various applications.

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