Rohm Semiconductor
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RRS100P03TB1

RRS100P03TB1 Product Overview

Introduction

The RRS100P03TB1 is a power MOSFET belonging to the category of electronic components. This device is commonly used in various electronic circuits and systems for its unique characteristics and performance.

Basic Information Overview

  • Category: Electronic Component
  • Use: Power MOSFET for electronic circuits and systems
  • Characteristics: High power handling capacity, low on-resistance, fast switching speed
  • Package: TO-263-3 (D2PAK)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Typically supplied in reels or tubes, quantity varies based on manufacturer

Specifications

  • Model: RRS100P03TB1
  • Type: P-Channel
  • Voltage Rating: 30V
  • Current Rating: 100A
  • On-Resistance: 3mΩ
  • Gate Threshold Voltage: -2V
  • Package Type: TO-263-3 (D2PAK)

Detailed Pin Configuration

The RRS100P03TB1 follows the standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High current-carrying capability
  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient operation

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-resistance leading to reduced power dissipation
  • Fast switching speed for improved efficiency

Disadvantages

  • Sensitive to static electricity and voltage spikes
  • Requires careful handling during installation and usage

Working Principles

The RRS100P03TB1 operates based on the principles of field-effect transistors, utilizing the control of voltage applied to the gate terminal to regulate the flow of current between the source and drain terminals.

Detailed Application Field Plans

The RRS100P03TB1 finds extensive application in various fields including: - Power supply units - Motor control systems - Inverters and converters - Battery management systems

Detailed and Complete Alternative Models

  • RRS100P02TB1
  • RRS100P04TB1
  • RRS100P06TB1
  • RRS100P08TB1

In conclusion, the RRS100P03TB1 power MOSFET offers high-performance characteristics suitable for diverse electronic applications, with its efficient power management capabilities and robust design making it a preferred choice for many electronic circuit designs.

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기술 솔루션에 RRS100P03TB1 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of RRS100P03TB1?

    • The maximum drain-source voltage of RRS100P03TB1 is 30V.

  2. What is the continuous drain current rating of RRS100P03TB1?

    • The continuous drain current rating of RRS100P03TB1 is 100A.

  3. What is the on-resistance of RRS100P03TB1?

    • The on-resistance of RRS100P03TB1 is typically 3mΩ.

  4. What is the gate threshold voltage of RRS100P03TB1?

    • The gate threshold voltage of RRS100P03TB1 is typically 2V.

  5. What is the power dissipation of RRS100P03TB1?

    • The power dissipation of RRS100P03TB1 is typically 200W.

  6. What are the typical applications for RRS100P03TB1?

    • RRS100P03TB1 is commonly used in power management, motor control, and automotive applications.

  7. What is the operating temperature range of RRS100P03TB1?

    • The operating temperature range of RRS100P03TB1 is -55°C to 175°C.

  8. Does RRS100P03TB1 have built-in protection features?

    • Yes, RRS100P03TB1 has built-in overcurrent and thermal protection.

  9. What is the package type of RRS100P03TB1?

    • RRS100P03TB1 comes in a TO-263-7 package.

  10. Is RRS100P03TB1 suitable for high-frequency switching applications?

    • Yes, RRS100P03TB1 is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.