Rohm Semiconductor
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RSS090P03FU7TB
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RSS090P03FU7TB

Product Overview

Category

The RSS090P03FU7TB belongs to the category of power MOSFETs.

Use

It is used for power management and switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The RSS090P03FU7TB is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power control and management in electronic circuits.

Packaging/Quantity

It is usually packaged individually and comes in quantities as per the manufacturer's specifications.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 90A
  • On-Resistance (RDS(on)): 3mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 100nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The RSS090P03FU7TB has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High current-carrying capability
  • Low on-resistance for minimal power loss
  • Suitable for high-frequency switching applications
  • Enhanced thermal performance

Advantages

  • Efficient power management
  • Reduced heat dissipation
  • Fast switching speed
  • Wide operating temperature range

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The RSS090P03FU7TB operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The RSS090P03FU7TB is commonly used in: - Switching power supplies - Motor control circuits - Battery management systems - LED lighting applications - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the RSS090P03FU7TB include: - IRF4905 - FDP8870 - STP90NF03L - AUIRFN8403

In conclusion, the RSS090P03FU7TB power MOSFET offers high-performance characteristics suitable for a wide range of power management and switching applications. Its specifications, functional features, and application field plans make it a versatile component in modern electronic systems.

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기술 솔루션에 RSS090P03FU7TB 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of RSS090P03FU7TB?

    • The maximum drain-source voltage of RSS090P03FU7TB is 30V.

  2. What is the continuous drain current rating of RSS090P03FU7TB?

    • The continuous drain current rating of RSS090P03FU7TB is 9A.

  3. What is the on-state resistance (RDS(on)) of RSS090P03FU7TB?

    • The on-state resistance (RDS(on)) of RSS090P03FU7TB is typically 7mΩ at VGS = -10V.

  4. What is the gate threshold voltage of RSS090P03FU7TB?

    • The gate threshold voltage of RSS090P03FU7TB typically ranges from -1V to -2.5V.

  5. What is the power dissipation of RSS090P03FU7TB?

    • The power dissipation of RSS090P03FU7TB is typically 2.5W.

  6. What are the typical applications for RSS090P03FU7TB?

    • Typical applications for RSS090P03FU7TB include power management in portable devices, battery protection circuits, and load switching.

  7. Is RSS090P03FU7TB suitable for automotive applications?

    • Yes, RSS090P03FU7TB is suitable for automotive applications due to its high efficiency and low on-state resistance.

  8. What is the operating temperature range of RSS090P03FU7TB?

    • The operating temperature range of RSS090P03FU7TB is typically -55°C to 150°C.

  9. Does RSS090P03FU7TB have built-in ESD protection?

    • Yes, RSS090P03FU7TB has built-in ESD protection, making it suitable for robust and reliable designs.

  10. Can RSS090P03FU7TB be used in parallel to increase current handling capability?

    • Yes, RSS090P03FU7TB can be used in parallel to increase current handling capability in high-power applications.