STB21NM60N
Introduction
The STB21NM60N is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Semiconductor device
- Use: Power switching applications
- Characteristics: High voltage capability, low input capacitance, fast switching speed
- Package: TO-220FP
- Essence: Power MOSFET for efficient power management
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Voltage Rating: 600V
- Current Rating: 21A
- On-state Resistance (RDS(on)): 0.19Ω
- Gate Threshold Voltage (VGS(th)): 2-4V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STB21NM60N features a standard TO-220FP package with three pins: 1. Gate (G): Input terminal for controlling the switching operation 2. Drain (D): Output terminal connected to the load 3. Source (S): Common terminal
Functional Features
- High voltage capability enables use in diverse power applications
- Low input capacitance ensures minimal switching losses
- Fast switching speed enhances overall system efficiency
Advantages and Disadvantages
Advantages
- Efficient power management
- Suitable for high voltage applications
- Low input capacitance reduces switching losses
Disadvantages
- Higher RDS(on) compared to some alternative models
- Limited current rating for certain high-power applications
Working Principles
The STB21NM60N operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently switch high power loads.
Detailed Application Field Plans
The STB21NM60N finds extensive use in the following application fields: - Switching power supplies - Motor control systems - Inverters and converters - Electronic ballasts - LED lighting drivers
Detailed and Complete Alternative Models
- STB20NM50FD: Similar voltage and current ratings with lower RDS(on)
- STB25NM50N: Higher current rating with comparable RDS(on) and voltage capability
- STB18N60M2: Lower voltage rating with improved RDS(on) performance
In conclusion, the STB21NM60N power MOSFET offers a balance of high voltage capability, low input capacitance, and fast switching speed, making it suitable for various power management applications.
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기술 솔루션에 STB21NM60N 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
Sure, here are 10 common questions and answers related to the application of STB21NM60N in technical solutions:
Q: What is STB21NM60N? A: STB21NM60N is a 600V N-channel Power MOSFET designed for high efficiency and power density applications.
Q: What are the typical applications of STB21NM60N? A: STB21NM60N is commonly used in switch mode power supplies, motor control, lighting, and automotive applications.
Q: What is the maximum drain-source voltage of STB21NM60N? A: The maximum drain-source voltage of STB21NM60N is 600V.
Q: What is the maximum continuous drain current of STB21NM60N? A: The maximum continuous drain current of STB21NM60N is 20A.
Q: What is the on-state resistance of STB21NM60N? A: The on-state resistance of STB21NM60N is typically around 0.19 ohms.
Q: Is STB21NM60N suitable for high frequency switching applications? A: Yes, STB21NM60N is designed for high frequency switching applications.
Q: Does STB21NM60N have built-in protection features? A: Yes, STB21NM60N has built-in protection against overcurrent, overtemperature, and undervoltage.
Q: What type of package does STB21NM60N come in? A: STB21NM60N is available in a TO-220FP package.
Q: Can STB21NM60N be used in automotive applications? A: Yes, STB21NM60N is suitable for use in automotive applications such as motor control and lighting.
Q: Are there any application notes or reference designs available for using STB21NM60N? A: Yes, the manufacturer provides application notes and reference designs to assist with the implementation of STB21NM60N in various technical solutions.