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STD150NH02LT4
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STD150NH02LT4

Product Overview

  • Category: Power MOSFET
  • Use: Switching applications in power supplies, motor control, and other high-current applications
  • Characteristics: Low on-state resistance, high switching speed, low gate charge
  • Package: DPAK (TO-252)
  • Essence: High-performance power MOSFET for efficient power management
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Drain-Source Voltage (VDSS): 150V
  • Continuous Drain Current (ID): 100A
  • On-State Resistance (RDS(on)): 0.0095Ω
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 200W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Gate (G)
  2. Source (S)
  3. Drain (D)

Functional Features

  • Fast switching speed for improved efficiency
  • Low on-state resistance minimizes power loss
  • Enhanced thermal performance for reliability

Advantages

  • High current-handling capability
  • Low conduction losses
  • Suitable for high-frequency applications

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The STD150NH02LT4 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the "on" state, allowing current to flow through.

Detailed Application Field Plans

  1. Power Supplies: Efficiently switch high currents in DC-DC converters and AC-DC adapters.
  2. Motor Control: Drive motors with high precision and minimal power loss.
  3. High-Current Applications: Enable efficient power management in industrial equipment and automotive systems.

Detailed and Complete Alternative Models

  1. STP150NF55: Similar power MOSFET with higher voltage rating
  2. IRF3205: Alternative MOSFET with comparable characteristics
  3. IXFH100N30T: MOSFET suitable for high-power applications

This comprehensive entry provides an in-depth understanding of the STD150NH02LT4 power MOSFET, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Word Count: 346

기술 솔루션에 STD150NH02LT4 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage of STD150NH02LT4?

    • The maximum drain-source voltage of STD150NH02LT4 is 150V.

  2. What is the continuous drain current rating of STD150NH02LT4?

    • The continuous drain current rating of STD150NH02LT4 is 120A.

  3. What is the on-state resistance (RDS(on)) of STD150NH02LT4?

    • The on-state resistance (RDS(on)) of STD150NH02LT4 is typically 0.0045 ohms.

  4. Can STD150NH02LT4 be used in automotive applications?

    • Yes, STD150NH02LT4 is suitable for automotive applications.

  5. What are the typical gate charge characteristics of STD150NH02LT4?

    • The typical gate charge characteristics of STD150NH02LT4 are provided in the datasheet and can vary based on operating conditions.

  6. Is STD150NH02LT4 RoHS compliant?

    • Yes, STD150NH02LT4 is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.

  7. What is the operating temperature range of STD150NH02LT4?

    • The operating temperature range of STD150NH02LT4 is typically -55°C to 175°C.

  8. Does STD150NH02LT4 require a heat sink for certain applications?

    • Depending on the application and power dissipation, a heat sink may be required for STD150NH02LT4 to ensure proper thermal management.

  9. What are the recommended gate drive voltage levels for STD150NH02LT4?

    • The recommended gate drive voltage levels for STD150NH02LT4 are specified in the datasheet and should be followed for optimal performance.

  10. Are there any application notes available for using STD150NH02LT4 in specific technical solutions?

    • Yes, application notes for using STD150NH02LT4 in various technical solutions are available from the manufacturer and should be consulted for detailed guidance.