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STF28N60DM2
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STF28N60DM2

Introduction

The STF28N60DM2 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Switching and amplification in electronic circuits
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-220FP
  • Essence: Efficient power management and control
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 600V
  • Current Rating: 28A
  • On-Resistance: 0.19Ω
  • Gate Charge: 38nC
  • Operating Temperature: -55°C to 150°C
  • Datasheet: STF28N60DM2 Datasheet

Detailed Pin Configuration

The STF28N60DM2 features a standard pin configuration for a TO-220FP package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High Voltage Capability: Suitable for high-power applications
  • Low On-Resistance: Minimizes power loss and heat generation
  • Fast Switching Speed: Enables efficient operation in switching circuits

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher gate charge compared to some alternative models
  • Relatively higher cost compared to lower-rated MOSFETs

Working Principles

The STF28N60DM2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, the MOSFET allows current to flow between the drain and source terminals, effectively acting as a switch or amplifier in electronic circuits.

Detailed Application Field Plans

The STF28N60DM2 finds extensive use in various applications, including: - Switching power supplies - Motor control - Inverters - Audio amplifiers - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the STF28N60DM2 include: - IRF840 - FDP8870 - IXFN38N100Q2

In conclusion, the STF28N60DM2 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications requiring efficient power management and control.

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기술 솔루션에 STF28N60DM2 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage rating of STF28N60DM2?

    • The maximum drain-source voltage rating of STF28N60DM2 is 600V.

  2. What is the continuous drain current rating of STF28N60DM2?

    • The continuous drain current rating of STF28N60DM2 is 28A.

  3. What is the on-resistance of STF28N60DM2?

    • The on-resistance of STF28N60DM2 is typically 0.14 ohms.

  4. What is the gate threshold voltage of STF28N60DM2?

    • The gate threshold voltage of STF28N60DM2 is typically 3V.

  5. What are the typical applications for STF28N60DM2?

    • STF28N60DM2 is commonly used in applications such as motor control, power supplies, and inverters.

  6. What is the operating temperature range of STF28N60DM2?

    • The operating temperature range of STF28N60DM2 is typically -55°C to 150°C.

  7. Does STF28N60DM2 require a heat sink for operation?

    • It is recommended to use a heat sink when operating STF28N60DM2 at high currents or in high-temperature environments.

  8. Is STF28N60DM2 suitable for switching applications?

    • Yes, STF28N60DM2 is suitable for high-speed switching applications due to its low on-resistance and fast switching characteristics.

  9. What is the gate charge of STF28N60DM2?

    • The gate charge of STF28N60DM2 is typically 30nC.

  10. Can STF28N60DM2 be used in parallel to increase current handling capability?

    • Yes, STF28N60DM2 can be used in parallel to increase the overall current handling capability in high-power applications. However, proper attention should be given to current sharing and thermal management.