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STU16N60M2
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STU16N60M2

Introduction

The STU16N60M2 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Semiconductor device
  • Use: Power switching applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-220, TO-220FP
  • Essence: Efficient power management
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Voltage Rating: 600V
  • Current Rating: 16A
  • On-Resistance: 0.25Ω
  • Gate Threshold Voltage: 3V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STU16N60M2 typically features a standard pin configuration with the following pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability enables use in various power applications
  • Low on-resistance minimizes power losses and improves efficiency
  • Fast switching speed allows for rapid control of power flow

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance for improved efficiency
  • Fast switching speed enhances control capabilities

Disadvantages

  • Sensitivity to static electricity requires careful handling during installation
  • Higher cost compared to standard MOSFETs due to advanced features

Working Principles

The STU16N60M2 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a sufficient gate voltage is applied, the device allows the flow of current between the drain and source terminals.

Detailed Application Field Plans

The STU16N60M2 finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - Inverters and converters - Electronic ballasts - Audio amplifiers

Detailed and Complete Alternative Models

  • STU12N60M2
  • STU20N60M2
  • STU16N50M2
  • STU16N65M2

In conclusion, the STU16N60M2 power MOSFET offers high-performance characteristics suitable for a wide range of power switching applications, making it a valuable component in modern electronic systems.

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기술 솔루션에 STU16N60M2 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage rating of STU16N60M2?

    • The maximum drain-source voltage rating of STU16N60M2 is 600V.

  2. What is the continuous drain current rating of STU16N60M2?

    • The continuous drain current rating of STU16N60M2 is 16A.

  3. What is the on-state resistance (RDS(on)) of STU16N60M2?

    • The on-state resistance (RDS(on)) of STU16N60M2 is typically 0.25 ohms.

  4. What is the gate threshold voltage of STU16N60M2?

    • The gate threshold voltage of STU16N60M2 typically ranges from 2 to 4V.

  5. What are the typical applications for STU16N60M2?

    • STU16N60M2 is commonly used in power supplies, motor control, and lighting applications.

  6. What is the maximum junction temperature of STU16N60M2?

    • The maximum junction temperature of STU16N60M2 is 150°C.

  7. Does STU16N60M2 require a heat sink for operation?

    • Depending on the application and operating conditions, a heat sink may be required to ensure proper thermal management.

  8. What is the input capacitance of STU16N60M2?

    • The input capacitance of STU16N60M2 is typically around 1600pF.

  9. Is STU16N60M2 suitable for high-frequency switching applications?

    • Yes, STU16N60M2 is designed for high-frequency switching applications.

  10. What are the recommended storage conditions for STU16N60M2?

    • STU16N60M2 should be stored in a dry environment at temperatures between -55°C and 150°C.