Taiwan Semiconductor Corporation
이미지는 예시일 수 있습니다.
제품 세부사항은 사양을 확인하세요.
1N4935GHB0G
자세히보기 데이터시트

1N4935GHB0G - Semiconductor Diode

Basic Information Overview

  • Category: Semiconductor Diode
  • Use: Rectification of electrical current
  • Characteristics: High efficiency, low forward voltage drop, fast switching speed
  • Package: DO-41 (Axial Lead)
  • Essence: Silicon rectifier diode
  • Packaging/Quantity: Available in reels or bulk packaging

Specifications

  • Maximum Average Forward Current: 1A
  • Peak Repetitive Reverse Voltage: 50V
  • Forward Voltage Drop: 1V at 1A
  • Reverse Recovery Time: 4ns
  • Operating Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The 1N4935GHB0G is a two-terminal device with an anode and a cathode. The anode is typically denoted by a band on the diode body.

Functional Features

  • Efficient rectification of AC to DC current
  • Fast switching speed for high-frequency applications
  • Low forward voltage drop minimizes power loss

Advantages and Disadvantages

Advantages: - High efficiency - Fast switching speed - Low forward voltage drop

Disadvantages: - Limited reverse voltage capability - Susceptible to thermal runaway at high currents

Working Principles

The 1N4935GHB0G operates based on the principle of semiconductor junction rectification. When forward biased, it allows current to flow, while in reverse bias, it blocks the current flow.

Detailed Application Field Plans

  • Power supplies
  • Rectifiers in electronic circuits
  • Voltage clamping circuits
  • Switching power supplies

Detailed and Complete Alternative Models

  • 1N4001: Similar characteristics but higher voltage rating
  • 1N4148: Faster switching speed but lower current rating
  • 1N5819: Schottky diode with lower forward voltage drop

This comprehensive entry provides detailed information about the 1N4935GHB0G semiconductor diode, covering its basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

기술 솔루션에 1N4935GHB0G 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum forward voltage of 1N4935GHB0G?

    • The maximum forward voltage of 1N4935GHB0G is typically 1V at a forward current of 1A.

  2. What is the reverse voltage rating of 1N4935GHB0G?

    • The reverse voltage rating of 1N4935GHB0G is 200V.

  3. What is the maximum forward current of 1N4935GHB0G?

    • The maximum forward current of 1N4935GHB0G is 1A.

  4. What is the package type of 1N4935GHB0G?

    • 1N4935GHB0G comes in a DO-41 package.

  5. What are the typical applications for 1N4935GHB0G?

    • 1N4935GHB0G is commonly used in rectifier and freewheeling diode applications, as well as in power supplies and voltage clamping circuits.

  6. What is the operating temperature range of 1N4935GHB0G?

    • The operating temperature range of 1N4935GHB0G is -65°C to +175°C.

  7. Does 1N4935GHB0G have any special handling or storage requirements?

    • 1N4935GHB0G should be stored in a dry environment and handled with proper ESD precautions to avoid damage.

  8. Is 1N4935GHB0G RoHS compliant?

    • Yes, 1N4935GHB0G is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.

  9. What is the typical reverse recovery time of 1N4935GHB0G?

    • The typical reverse recovery time of 1N4935GHB0G is 50ns.

  10. Can 1N4935GHB0G be used in high-frequency applications?

    • While 1N4935GHB0G can be used in some high-frequency applications, its performance may be limited compared to specialized high-speed diodes. It's important to consider the specific requirements of the application before using this diode in high-frequency circuits.