ESH1B-M3/5AT

Introduction

The ESH1B-M3/5AT is a semiconductor product belonging to the category of Schottky Barrier Diodes. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the ESH1B-M3/5AT.

Basic Information Overview

• Category: Schottky Barrier Diodes
• Use: Rectification and switching in electronic circuits
• Characteristics: Low forward voltage drop, high switching speed, low leakage current
• Package: SOD-123FL
• Essence: Semiconductor diode for rectification and switching applications
• Packaging/Quantity: Available in tape and reel packaging with quantities varying by manufacturer

Specifications

• Forward Voltage: Typically 0.35V at 1A
• Reverse Voltage: 30V
• Forward Current: 1A
• Reverse Recovery Time: 15ns
• Operating Temperature Range: -65°C to +125°C

Detailed Pin Configuration

The ESH1B-M3/5AT typically has the following pin configuration: - Pin 1: Anode - Pin 2: Cathode

Functional Features

• Low forward voltage drop enables efficient power conversion
• High switching speed allows for rapid circuit operation
• Low leakage current minimizes power loss in standby mode

Advantages and Disadvantages

Advantages

• Efficient power conversion due to low forward voltage drop
• Rapid circuit operation facilitated by high switching speed
• Reduced power loss in standby mode owing to low leakage current

Disadvantages

• Limited reverse voltage capability compared to other diode types
• Sensitivity to temperature variations may affect performance in extreme conditions

Working Principles

The ESH1B-M3/5AT operates based on the Schottky barrier principle, where the metal-semiconductor junction creates a low forward voltage drop and fast switching characteristics. When a forward bias is applied, the diode conducts current with minimal voltage drop, making it suitable for high-frequency applications.

Detailed Application Field Plans

The ESH1B-M3/5AT finds extensive use in various electronic applications, including: - Switching power supplies - DC-DC converters - Reverse polarity protection circuits - Low voltage rectifiers

Detailed and Complete Alternative Models

Some alternative models to the ESH1B-M3/5AT include: - SS12 - SB130 - BAT54S

In summary, the ESH1B-M3/5AT is a Schottky Barrier Diode with low forward voltage drop, high switching speed, and low leakage current, making it suitable for diverse rectification and switching applications in electronic circuits.

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