ESH1C-E3/61T Product Overview

Introduction

The ESH1C-E3/61T is a versatile electronic component that belongs to the category of semiconductor devices. This entry provides an in-depth overview of the product, including its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Device
• Use: Signal Amplification and Switching
• Characteristics: High Frequency Operation, Low Power Consumption
• Package: SOT-23-6
• Essence: Silicon-based semiconductor
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Type: NPN Transistor
• Maximum Collector-Base Voltage (Vcb): 50V
• Maximum Collector Current (Ic): 100mA
• Maximum Power Dissipation (Pd): 225mW
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)
4. Not Connected (NC)
5. Not Connected (NC)
6. Base (B)

Functional Features

• High frequency operation suitable for RF applications
• Low power consumption ideal for battery-operated devices
• Small form factor for space-constrained designs
• RoHS compliant for environmental sustainability

Advantages and Disadvantages

Advantages

• High transition frequency enables efficient signal amplification at high frequencies
• Low power consumption prolongs battery life in portable electronics
• Small package size facilitates compact circuit designs

Disadvantages

• Limited maximum collector current may restrict certain high-power applications
• Sensitivity to static electricity requires careful handling during assembly

Working Principles

The ESH1C-E3/61T operates as an NPN transistor, where the flow of current from the base to the emitter controls the larger current flow from the collector to the emitter. This allows it to amplify or switch electronic signals based on the input at the base terminal.

Detailed Application Field Plans

The ESH1C-E3/61T is well-suited for various applications, including: - Radio Frequency (RF) amplifiers - Oscillators and mixers in communication systems - Low-power switching circuits in portable electronics - Sensor interfaces in industrial automation

Detailed and Complete Alternative Models

For users seeking alternatives to the ESH1C-E3/61T, the following models can be considered: - ESH1D-E3/61T: Similar specifications with higher maximum collector current - ESH1A-E3/61T: Lower transition frequency but higher maximum power dissipation - ESH2C-E3/61T: Higher transition frequency and maximum power dissipation

In conclusion, the ESH1C-E3/61T offers high-frequency operation, low power consumption, and a small form factor, making it suitable for a wide range of applications in the electronics industry.

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