FESE8JT-E3/45

Product Overview

Category

The FESE8JT-E3/45 belongs to the category of electronic components, specifically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

Use

It is commonly used in electronic circuits for switching and amplifying signals.

Characteristics

• High voltage capability
• Low input capacitance
• Fast switching speed
• Low on-resistance

Package

The FESE8JT-E3/45 is typically packaged in a TO-220AB package.

Essence

This power MOSFET is essential for controlling high-power applications in various electronic devices.

Packaging/Quantity

It is usually available in reels or tubes with varying quantities depending on the supplier.

Specifications

• Voltage Rating: 80V
• Current Rating: 45A
• On-Resistance: 8mΩ
• Gate-Source Voltage (Max): ±20V
• Power Dissipation: 200W

Detailed Pin Configuration

1. Source
2. Gate
3. Drain

Functional Features

• High voltage capability allows for use in a wide range of applications.
• Low input capacitance enables fast switching speeds.
• Low on-resistance minimizes power loss and heat generation.

Advantages

• Suitable for high-power applications
• Fast switching speed
• Low power dissipation

Disadvantages

• May require additional circuitry for driving the gate
• Sensitivity to static electricity

Working Principles

The FESE8JT-E3/45 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals.

Detailed Application Field Plans

• Power supplies
• Motor control
• Audio amplifiers
• LED lighting

Detailed and Complete Alternative Models

• IRF3205
• FDP8870
• STP55NF06L

In conclusion, the FESE8JT-E3/45 power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of electronic applications. However, it may require additional circuitry for gate driving and is sensitive to static electricity.

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