Vishay Semiconductor Diodes Division
이미지는 예시일 수 있습니다.
제품 세부사항은 사양을 확인하세요.
MBR10H100-E3/45
자세히보기 데이터시트

MBR10H100-E3/45

Introduction

The MBR10H100-E3/45 is a high-performance Schottky rectifier diode designed for various electronic applications. This entry provides an overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Product Overview

  • Category: Semiconductor/Electronic Component
  • Use: Rectification in power supply circuits, voltage clamping, and freewheeling diode applications.
  • Characteristics: High current capability, low forward voltage drop, fast switching speed, and high reliability.
  • Package: TO-220AB
  • Essence: Schottky Rectifier Diode
  • Packaging/Quantity: Tape & Reel (800 units per reel)

Specifications

  • Voltage Rating: 100V
  • Current Rating: 10A
  • Forward Voltage Drop: 0.55V at 5A
  • Reverse Leakage Current: 50µA at 100V
  • Operating Temperature Range: -65°C to +175°C
  • Storage Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The MBR10H100-E3/45 follows the standard pin configuration for a TO-220AB package: 1. Anode 2. Cathode 3. Not connected (Tab)

Functional Features

  • Fast Switching: Enables rapid response in power supply circuits.
  • Low Forward Voltage Drop: Reduces power dissipation and improves efficiency.
  • High Reliability: Ensures consistent performance over the product's lifespan.

Advantages and Disadvantages

Advantages

  • High current capability
  • Low forward voltage drop
  • Fast switching speed
  • Reliable performance

Disadvantages

  • Higher cost compared to standard rectifier diodes
  • Sensitive to reverse voltage spikes

Working Principles

The MBR10H100-E3/45 operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes. When a forward bias is applied, the diode conducts current with minimal voltage drop, making it suitable for high-frequency and high-efficiency applications.

Detailed Application Field Plans

The MBR10H100-E3/45 is commonly used in the following applications: - Switching power supplies - DC-DC converters - Voltage clamping circuits - Freewheeling diode in inductive load circuits

Detailed and Complete Alternative Models

  • MBR10H100CTG
  • MBR10H100CTG-E4/45
  • MBR10H100CTG-E3/45
  • MBR10H100CTG-E3/73

In summary, the MBR10H100-E3/45 is a high-performance Schottky rectifier diode with excellent characteristics, making it suitable for various power supply and rectification applications. Its fast switching speed, low forward voltage drop, and high reliability make it a preferred choice in modern electronic designs.

Word Count: 443

기술 솔루션에 MBR10H100-E3/45 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the MBR10H100-E3/45 used for?

    • The MBR10H100-E3/45 is a Schottky diode rectifier commonly used in power supply and voltage regulation applications.

  2. What are the key specifications of the MBR10H100-E3/45?

    • The MBR10H100-E3/45 has a maximum repetitive reverse voltage of 100V, a forward current of 10A, and a low forward voltage drop.

  3. How does the MBR10H100-E3/45 compare to other diodes in its class?

    • The MBR10H100-E3/45 offers lower forward voltage drop and faster switching compared to standard diodes, making it suitable for high-frequency applications.

  4. Can the MBR10H100-E3/45 be used in automotive electronics?

    • Yes, the MBR10H100-E3/45 is suitable for automotive applications due to its high reliability and temperature stability.

  5. What are some typical circuit configurations using the MBR10H100-E3/45?

    • The MBR10H100-E3/45 can be used in bridge rectifier configurations, voltage clamping circuits, and DC-DC converter designs.

  6. Does the MBR10H100-E3/45 require heatsinking?

    • Depending on the application and current levels, heatsinking may be necessary to ensure optimal performance and reliability.

  7. Are there any common failure modes associated with the MBR10H100-E3/45?

    • Common failure modes include thermal runaway under high current conditions and reverse voltage breakdown if operating beyond the specified limits.

  8. What are the recommended storage and operating conditions for the MBR10H100-E3/45?

    • The MBR10H100-E3/45 should be stored in a dry, cool environment and operated within the specified temperature and voltage ranges outlined in the datasheet.

  9. Can the MBR10H100-E3/45 be used in parallel for higher current applications?

    • Yes, the MBR10H100-E3/45 can be paralleled to increase the overall current handling capability in certain designs.

  10. Where can I find additional application notes and design resources for the MBR10H100-E3/45?

    • Additional application notes and design resources can be found on the manufacturer's website or through authorized distributors.