Vishay Semiconductor Diodes Division
이미지는 예시일 수 있습니다.
제품 세부사항은 사양을 확인하세요.
MBRF1045HE3/45
자세히보기 데이터시트

MBRF1045HE3/45

Introduction

The MBRF1045HE3/45 is a high-efficiency, Schottky barrier rectifier designed for use in various electronic applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Electronic Components
  • Use: Rectification in power supply circuits, voltage clamping, and freewheeling diode functions.
  • Characteristics: High efficiency, low forward voltage drop, fast switching speed, and low reverse leakage current.
  • Package: TO-220AB
  • Essence: Schottky Barrier Rectifier
  • Packaging/Quantity: Tape & Reel (800 units per reel)

Specifications

  • Forward Voltage Drop: 0.65V at 10A
  • Reverse Voltage: 45V
  • Average Rectified Current: 10A
  • Peak Surge Current: 150A
  • Operating Temperature Range: -65°C to +175°C
  • Storage Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The MBRF1045HE3/45 has a standard TO-220AB package with three pins: Anode, Cathode, and Gate.

Functional Features

  • High efficiency and reliability
  • Fast switching speed
  • Low power loss
  • Low thermal resistance

Advantages and Disadvantages

Advantages

  • Reduced heat sink requirements due to low power dissipation
  • Enhanced system efficiency
  • Suitable for high-frequency applications

Disadvantages

  • Higher initial cost compared to standard rectifiers
  • Sensitive to voltage transients

Working Principles

The MBRF1045HE3/45 operates based on the Schottky barrier principle, which utilizes a metal-semiconductor junction to provide low forward voltage drop and fast switching characteristics.

Detailed Application Field Plans

The MBRF1045HE3/45 is commonly used in: - Switching power supplies - DC-DC converters - Reverse polarity protection circuits - Battery charging circuits - Solar panel bypass diodes

Detailed and Complete Alternative Models

  • MBRF1045CTG
  • MBRF1045T4G
  • MBRF1045G

In conclusion, the MBRF1045HE3/45 is a high-performance Schottky barrier rectifier suitable for various power electronics applications, offering high efficiency, fast switching speed, and low power loss. Its robust design and wide operating temperature range make it a preferred choice for demanding electronic systems.

[Word Count: 398]

기술 솔루션에 MBRF1045HE3/45 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the MBRF1045HE3/45?

    • The MBRF1045HE3/45 is a Schottky diode rectifier designed for high-frequency applications.

  2. What are the key features of the MBRF1045HE3/45?

    • The key features include low forward voltage drop, high current capability, and fast switching speed.

  3. What are the typical applications of the MBRF1045HE3/45?

    • Typical applications include power supplies, converters, freewheeling diodes, and reverse battery protection.

  4. What is the maximum forward voltage of the MBRF1045HE3/45?

    • The maximum forward voltage is typically around 0.65V at a forward current of 10A.

  5. What is the maximum reverse voltage of the MBRF1045HE3/45?

    • The maximum reverse voltage is 45V.

  6. What is the operating temperature range of the MBRF1045HE3/45?

    • The operating temperature range is typically -65°C to +175°C.

  7. What is the package type of the MBRF1045HE3/45?

    • The package type is DPAK (TO-252).

  8. What are the advantages of using the MBRF1045HE3/45 in power supply applications?

    • The advantages include low power loss, high efficiency, and compact design.

  9. Can the MBRF1045HE3/45 be used in automotive applications?

    • Yes, it can be used in automotive applications such as voltage regulators and DC-DC converters.

  10. Are there any recommended layout considerations when using the MBRF1045HE3/45?

    • Yes, it is recommended to minimize the length of the PCB traces and keep the diode close to the load to reduce parasitic inductance.