SS5P10HM3_A/H

Product Overview

Category: Semiconductor
Use: Power management
Characteristics: High efficiency, low power consumption
Package: SOT-23
Essence: Power MOSFET
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage - Drain-Source Breakdown (Max): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.7A
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) @ Vgs: 12nC @ 10V

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-resistance
• Fast switching speed
• High power density

Advantages and Disadvantages

Advantages: - High efficiency - Low power consumption - Small package size

Disadvantages: - Limited voltage and current handling capacity

Working Principles

SS5P10HM3_A/H is a power MOSFET designed to efficiently switch and control power in various electronic circuits. It operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This component is widely used in applications requiring high-efficiency power management, such as: - Switching power supplies - Battery management systems - LED lighting - Motor control circuits

Detailed and Complete Alternative Models

1. SS5P10HM3_B/H
   • Similar specifications and characteristics
   • May have minor variations in performance
2. SS5P10HM3_C/H
   • Comparable features and package type
   • Suitable for similar power management applications

Note: The alternative models listed above are indicative and may vary based on availability and specific application requirements.

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This content provides a comprehensive overview of the SS5P10HM3_A/H, covering its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.