Diode/Bridge Rectifier

100V 1A VF=0.85V@1A

G band table frame technology Silicon carbide Silicon carbide is better than C2480 Silicon carbide SS14 this common product

Schottky diode Silicon carbide DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 800mV@100mA 30V,0.2A,[email protected]

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

200V, VF=950mV@5A Silicon carbide Schottky diode rectification

200V, VF=950mV@5A Silicon carbide Schottky diode rectification

200V 10A VF=0.92 @ 10A