Diode/Bridge Rectifier

This ultrafast power rectifier is suitable for high voltage, high frequency rectification, or applications using surface mount freewheeling and protection diodes, where compact size and weight are critical to the system.

MUR860F-B1-0000HF

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs chromium barrier metal, oxide passivation, and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

This switching diode is suitable for high speed switching applications. This dual diode device consists of two diodes in series encapsulation in an SC-70/SOT-323 surface mount encapsulation.

VR=40V IO=2A VF=0.55V@2A

Silicon carbidediode SiC SBD patch encapsulation is used in UPS, fast charging, micro-inverter, power supply, power tools, consumer products, industrial control