Diode/Bridge Rectifier

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

30V,0.2A,VF=1V@100mA

30V,0.2A,VF=1V@100mA

VR=40V IO=5A VF=0.44V@5A

40V, 3A, VF=0.55V@3A

150V, 3A, VF=0.85V@3A

This standard recovery rectifier is suitable for power supply and other applications.

E1GF-F1-0000HF

200V, 3A, VF=0.89V@3A

200V, 3A, VF=0.89V@3A