Diode/Bridge Rectifier

Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode

Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode

60V,1A,VF=0.5V@1A

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.0V@2A Reverse current (Ir): 10uA@200V Reverse recovery time (trr): 50ns

Diode configuration: 1 pair of common anode Power: 225mW DC reverse withstand voltage (Vr): 250V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@200mA Reverse current (Ir): 100nA@200V Reverse recovery time (trr): 50ns Operating temperature: +150℃@(Tj)

DC reverse withstand voltage (Vr): 100V Silicon carbide Silicon carbide average rectified current (Io): 5A Forward voltage drop (Vf): 850mV@5A Silicon carbide reverse current (Ir): 500μA@40V Forward surge current (Ifsm): 120A

DC reverse withstand voltage (Vr): 100V Silicon carbide Silicon carbide average rectified current (Io): 5A Forward voltage drop (Vf): 850mV@5A Silicon carbide reverse current (Ir): 500μA@40V Forward surge current (Ifsm): 120A