Diode/Bridge Rectifier

These Schottky diode barrier diodes are suitable for high-speed switching applications, circuit protection, and voltage clamping. Very low forward voltage reduces conduction losses. Miniature encapsulation is ideal for handheld and portable applications where space is limited.

The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It employs an epitaxial structure with oxide passivation and metal-covered contacts. The Schottky diode is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

The MB series Bridge rectifier is a 0.5 A rectifier series, which realizes high surge current absorption and occupies a very small footprint. The MB series has an appearance as small as 35 mm2 and has excellent surge capability. To absorb high surge currents, the design supports a forward surge peak current (IFSM) rating of 35 A and a 5.0 A 2-second I2T capability. This family of devices also features a breakdown voltage rating of up to 1000 V. These features make the MB series suitable for small power supplies requiring slightly stronger surge capability. If you need higher IFAV rated current, smaller encapsulation, or lower VF value, please learn about ON Semiconductor MDB series Bridge rectifier. For lower VF and higher energy efficiency values ​​within MB encapsulation, or higher surge capability, check out ON Semiconductor's upcoming MBxSV series.

I(AV) 1 VRRM(V) 20 IFsM(A) 25 VFM(V) 0.45 VFMI(AV)(A) 1 IRM@VRRM(μA) 1

400V 1A