Diode/Bridge Rectifier

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 10A Forward voltage drop (Vf): 900mV@5A

Vrrm=600V

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.