Diode/Bridge Rectifier

45V, 2x20A, VF=0.49V@20A

Diode configuration: Independent DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.2V@3A Reverse current (Ir): 10uA@400V Operating temperature: -50 ℃~+175℃@(Tj)

30V 0.1A

30V 0.1A

VR=100V IO=3A VF=0.85V@6A

20V,1A

Schottky diode uses the principle of Schottky diode barrier, using barrier metal, which can produce an optimized forward voltage drop-reverse current trade-off. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system. This encapsulation provides an alternative to the leadless 34 MELF style encapsulation.

I(AV) 1 VRRM(V) 400 IFsM(A) 30 VFM(V) 1.3 VFMI(AV)(A) 1 IRM@VRRM(μA) 5 trr(ns) 150

40V 5A VF=0.5V @ 5A