Diode/Bridge Rectifier

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GBJL1506-B1-0000

I(AV) 1 VRRM(V) 1000 IFsM(A) 30 VFM(V) 1.3 VFMI(AV)(A) 1 IRM@VRRM(μA) 5 trr(ns) 500

40V, 100mA

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

3A/100V

A pair of common cathode, 100V, 15A, VF=0.89V@15A

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