Diode/Bridge Rectifier

8-10 times anti-surge energy, VF value 1.5V

DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1.5A Forward voltage drop (Vf): [email protected] Reverse current (Ir): 10uA@1kV Forward surge current (Ifsm) : 50A Working temperature: -55℃~+150℃@(Tj)

I(AV) 3 VRRM(V) 100 IFsM(A) 80 VFM(V) 0.6 VFMI(AV)(A) 3 IRM@VRRM(μA) 0.1

VR=70V IF=70mA VF=1V@15mA

The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It has an epitaxial structure with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

DC Reverse Withstand Voltage (Vr) 1000 Average Rectified Current (Io) 6 Forward Surge Current (Ifsm) 175 Reverse Current (Ir) 10