Diode/Bridge Rectifier

Maximum Dissipation\nPower 0.35 Maximum Reverse\nPeak Voltage (V) 100 Maximum Reverse\nPeak Voltage IR (uA) 100 Maximum Forward\nVoltage (V) 1 Maximum Forward\nVoltage IF (mA) 10 Maximum reverse \n current IR (uA) 5 Maximum reverse \n current VR (V) 75 Maximum reverse recovery time (ns) 4

I(AV) 40 VRRM(V) 100 IFsM(A) 320 VFM(V) 0.6 VFMI(AV)(A) 40 IRM@VRRM(μA) 14

VrRM 60 Vrrs 42 Silicon carbide Vbc 60 IFAV 2 IFsM 50 VF 0.7 IR(25℃) 0.05 IR(100℃) 20 Cu 20 RoJA Silicon carbide 75 Temperature℃ Silicon carbide-65to+175

VR=40V IO=1A VF=0.55V@1A

VR=40V IO=1A VF=0.55V@1A

The BAS21TMR6T1G device hosts three high voltage switching diodes within an SC-74 surface mount encapsulation. The device is suitable for low power surface mount applications where board space is at a premium.

This Schottky diode is suitable for high-speed switching applications, circuit protection, and voltage clamping. Very low forward voltage reduces conduction losses. Miniature encapsulations are ideal for space-constrained handheld and portable applications.

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

GBJ208-B1-0000