Diode/Bridge Rectifier

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

VR/1000V IR/0.005mA VF/1V IO/4A Trr/No ns

ES3K-F1-0000

GR1MB-F1-0000HF

Silicon carbideSBD650V6A

Silicon carbideSBD650V6A

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 8A Forward voltage drop (Vf): 1.45V@8A Reverse recovery time (trr): 25ns MUR860F-B1-0000HF