Diode/Bridge Rectifier

40V 0.2A

40V 0.2A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

DFR1M-label prefix

Same as C19184

GBJ2008-B1-0000

40V,2A,VF=0.55V@2A