Diode/Bridge Rectifier

Diode configuration: 1 pair in series Power: 225mW DC reverse withstand voltage (Vr): 70V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@150mA Reverse recovery time (trr): 6ns

100V, 200mA, trr=4ns, VF=1.1V@100mA, PD=225mW

A pair of common cathode VR=100V IO=5A VF=0.79V@5A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

general purpose diode