Diode/Bridge Rectifier

VR=90V IO=1A VF=0.79V@1A

VR=90V IO=1A VF=0.79V@1A

I(AV) 10 VRRM(V) 150 IFsM(A) 160 VFM(V) 0.67 VFMI(AV)(A) 10 IRM@VRRM(μA) 1.5

VR=200V IO=5A VF=0.95V@5A

The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It has an epitaxial structure with oxide passivation and metal-covered contacts. The Schottky diode is suitable for low voltage, high frequency switching power supply, freewheeling diode and polarity protection diode.

Diode configuration: Standalone DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 3A Forward voltage drop (Vf): 850mV@3A

8-10 times anti-surge VF value 1.5V