Diode/Bridge Rectifier

DC reverse withstand voltage (Vr): 30V Silicon carbide Average rectified current (Io): 200mA Silicon carbide Forward voltage drop (Vf): 500mV@200mA Forward surge current (Ifsm): 1A Silicon carbide reverse current (Ir ): 30uA@10V

600V, 3A, VF=1.15V@3A

SKBPC5008-A1-0000

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.7V@1A Reverse recovery time (trr): 75ns

Diode configuration: 2 pairs in series Power: 200mW DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V@150mA Reverse current (Ir): 2.5uA@ 75V reverse recovery time (trr): 4ns Operating temperature: +150℃@(Tj)

A pair of common cathode VR=200V IO=20A VF=0.85V@20A

VR=100V IO=10A VF=0.85V@10A

DF35NA100-A1-0000