Diode/Bridge Rectifier

Common cathode, 70V, 700mA

Schottky diode Silicon carbide DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 500mA Forward voltage drop (Vf): 550mV@500mA

Schottky diode Silicon carbide DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 500mA Forward voltage drop (Vf): 550mV@500mA

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.3V@2A Reverse recovery time (trr): 250ns

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V@100mA