Optocoupler/LED/nixie tube/photoelectric device

Sent Diode@@Low Power 0.2W3V 80 Display Finger 3000K 25.5-33LM 3.2*2.8*0.65mm SMT

2835 white light 9V 1W 5700K-6500K ANSI less than 5; copper bracket + gold wire.

The FODM121 series, FODM124 and FODM2701 include a Gallium Arsenide Infrared Emitting Diode driving a phototransistor within a compact 4-pin micro-flat encapsulation. Lead spacing is 2.54 mm. The FODM2705 consists of two Gallium Arsenide Infrared Emitting Diodes connected in anti-parallel for AC operation.

4.8mm, λp =940nm

3528 bright red light reverse polarity RGB1.85T, top light, forward rated current: B: 30mA. RG: 45mA

HighSpeed10MBit/sLogicGateOptocouplers

3528 red emerald green bi-color (same polarity pin) SMD LED lamp bead 3528 red emerald green bi-color (same polar pin) (IV:R:450/G:720mcd(Typ)@IF=20mA)

The FOD8332 is a 2.5 A output current IGBT driver optocoupler capable of driving medium power IGBTs rated up to 1,200 V and 150 A. It is suitable for fast switching drive of power IGBTs and MOSFETs used in motor control inverter applications and high performance power systems. The FOD8332 provides the important protection features needed to protect against fault conditions that lead to destructive thermal dissipation of the IGBT. The device utilizes ON Semiconductor's proprietary coplanar Optoplanar encapsulation technology and optimized IC design to achieve reliable high isolation voltage and high noise immunity with high common-mode rejection and power-supply rejection specifications. The device features a wide body 16-pin small plastic encapsulation. The gate drive channel consists of a gallium aluminum arsenide (AlGaAs) light emitting diode (LED) optically coupled to a high speed driver IC with a low RDS(ON) MOSFET output stage. The fault sensing channel consists of a gallium aluminum arsenide (AlGaAs) light emitting diode (LED) optically coupled with an integrated high speed feedback circuit for fault sensing.

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