Optocoupler/LED/nixie tube/photoelectric device

The CNY17XM, CNY17FXM, and MOC810XM devices consist of a Gallium Arsenide infrared light-emitting diode coupled to an NPN phototransistor with dual-row plug-inencapsulation.

The FODM8801 device in the OptoHiT series is the first of its kind phototransistors, which are produced using Fairchild Semiconductor's leading patented process technology to achieve operating temperature characteristics up to 125°C. Optocouplers consist of an aluminum gallium arsenide (AlGaAs) infrared light-emitting diode optically coupled to a phototransistor in a compact half-pitch, 4-pin miniature flat encapsulation. It can provide high current transfer ratio at very low input current. I/O isolation voltage V

The MOC303XM and MOC304XM devices contain an AlGaAs infrared light-emitting diode optically coupled to a monolithic silicon detector that performs the function of a voltage zero-crossing detection triac driver.

The 6N137M, HCPL2601M, HCPL2611M single-channel and HCPL2630M, HCPL2631M dual-channel consist of an 850 nm AlGaAS LED optically coupled to a very high-speed integrated photodetector logic gate with tunable output. This output has an open collector allowing a wired OR output. Coupling parameters are guaranteed from -40°C to +85°C. Input signals up to 5mA provide a minimum output sink of 13mA (fan-out 8). Internal interference shielding provides excellent common-mode rejection, typically 10kV/µs. The HCPL2601M and HCPL2631M have a minimum CMR of 5kV/µs. The minimum CMR of the HCPL2611M is 10kV/?s.

The FOD8342 is a 3.0 A output current gate drive optocoupler capable of driving medium power IGBT/MOSFET. It is suitable for fast switching drive of power IGBTs and MOSFETs used in motor control inverter applications and high performance power systems. The FOD8342 series utilizes tensile body encapsulation to achieve 8 mm creepage and spacing (FOD8342T), and the optimized IC design achieves reliable high insulation voltage and high noise immunity. The FOD8342 family consists of a gallium aluminum arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to an integrated circuit using a high speed driver for a push-pull MOSFET output stage. The device features a stretched body, 6-lead, small-outline plastic encapsulation.

The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high-speed phototransistor. A separate connection for photodiode biasing reduces the base-collector capacitance of the input transistor and is orders of magnitude faster than conventional phototransistors. The HCPL4503M has no internal connection to the phototransistor base, improving noise immunity. Internal interference shielding provides excellent common-mode rejection up to 50,000 V/µs.