Sensor

The QRD1113/14 reflective sensor consists of an infrared light emitting diode and an NPN silicon photoelectric Darlington mounted side by side in a black plastic housing. Both the through-axis radiation of the emitter and the coaxial radiation of the detector are perpendicular to the end face of the QRD1113/14. The photodarlington responds to the radiation emitted by the diode only when a reflective object or surface is within the detector's field of view.

SMD differential pressure, -1~1kPa, 0.5~4.5V/5V

3-channel capacitive touch chip, strong anti-interference, can resist the interference of motors, inverters, high-voltage and high-frequency adapters (used in humidifiers, nebulizers, disinfection bags, UV germicidal lamps, mosquito killer lamps, levels, car vacuum cleaners, fascia guns and other products with high interference)

Polarity Omnipolarity VDD(V) 1.6-5.5 IDD(uA) 1.6 TA(℃) -40～85 BOP(GS) ±33 BRP(GS) ±23 FO(Hz) 5 Output Type CMOS

3D-25 P10 Straight Silicone Copper Wire