Triode/MOS tube/transistor/module

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 15V Collector Current (Ic): 50mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 50nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic, Ib): 500mV@10mA, HFE: 100-200

PNP

This dual PNP bipolar transistor is a spin-off of our popular SOT 23, SOT323, SOT563 3-lead devices. The device is suitable for general-purpose amplifier applications and comes in a SOT963 six-lead surface-mount encapsulation. By putting two discrete devices into one encapsulation, the device is suitable for low power surface mount applications where board space is at a premium.

N channel

RF Transistor NPN