Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -30 VGS(th)(v) -1.7 RDS(ON)(m?)@4.242V - Qg(nC) @4.5V - QgS(nC) 9 Qgd(nC) 6 Ciss(pF) 3029 Coss(pF) 129 Crss(pF) 76

Type: Dual N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 29A Power (Pd): 20.8W On-Resistance (RDS(on)@Vgs,Id): 10.5mΩ@10V,15A Threshold voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 8.7nC@10V Input capacitance (Ciss@Vds): 0.76nF@30V , Vds=60V Id=29A Rds=10.5 mΩ, working temperature: -55℃~+150℃@(Tj)DFN3.3*3.3encapsulation;

Type N VDSS(V) 100 ID@TC=85?C(A) 2 PD@TC=85?C(W) 1 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.65V 320

PNP collector-emitter breakdown voltage (Vceo): 50V collector current (Ic): 150mA power (Pd): 200mW collector cut-off current (Icbo): 100nA collector-emitter saturation voltage (VCE(sat)@Ic, Ib): 300mV@100mA HFE: 200-400