Triode/MOS tube/transistor/module
Cmos (Guangdong Field Effect Semiconductor)
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Semiconductor Transistor Field Effect Transistor MOS tube, TO-263, N channel, withstand voltage: 250V, current: 16A, 10V internal resistance (Max): 0.245Ω, power: 140W
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DIODES (US and Taiwan)
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HXY MOSFET (Huaxuanyang Electronics)
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Field effect transistor (MOSFET) N+P channel, N: VDSS withstand voltage 40V, ID current 7.2A, RDON on-resistance 26mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-2.5V, P: VDSS Withstand voltage 40V, ID current 6.5A, RDON on-resistance 54mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-2.5V,
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GOODWORK (Good Work)
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Infineon (Infineon)
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DIODES (US and Taiwan)
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Infineon (Infineon)
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TECH PUBLIC (Taizhou)
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Agertech (Agertech)
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Sinopower (large and medium)
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