Triode/MOS tube/transistor/module

This P-Channel Enhancement Mode Power MOSFET is produced using ON Semiconductor's planar stripe and DMOS proprietary processes. This advanced MOSFET process is suitable for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 10 ID(A)Max. -120 VGS(th)(v) -0.6 RDS(ON)(m?)@4.231V 2.1 Qg(nC) @4.5V 100 QgS(nC) 21 Qgd(nC) 32 Ciss(pF) 4950 Coss(pF) 380 Crss(pF) 290

N-channel 650V 9.5A

RF application, N channel, 12V 3A

N-channel, 30V, 11A, 0.007Ω@10V

NPN

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 2 VGS(th)(v) 0.8 RDS(ON)(m?)@4.8V 80 Qg(nC)@4.5V 7.6 QgS(nC) 1.3 Qgd(nC) 1.7 Ciss(pF) 391 Coss(pF) 87 Crss(pF) 60

Configuration Single Type N-Ch VDS(V) 120 VGS(V) 20 ID(A)Max. 150 VGS(th)(v) - RDS(ON)(m?)@4.465V - Qg(nC)@4.5V - QgS(nC) 18.1 Qgd(nC) 15.9 Ciss(pF) 5823 Coss(pF) 778.3 Crss(pF) 17.5