Triode/MOS tube/transistor/module

PNP, Vceo=-150V, Ic=-0.6A, hfe=100~200

NPN, Vceo=50V, Ic=150mA, hfe=200~400, silk screen HF

PNP, Vceo=-30V, Ic=-0.1A, hfe=220~475, silk screen 3K

PNP

NPN, Vceo=50V, Ic=2A, hfe=120~240, silk screen MY

NPN, Vceo=50V, Ic=150mA, hfe=180~390, silk screen BR

PNP, Vceo=-150V, Ic=-0.5A

40V 600mA PNP transistor V(CBO,Max)= -40V V(CEO,Max)= -40V V(EBO,Max)= -5V VBE(Sat,Min) = -0.75V Ic(Max) = 600mA Pc(max) = 625mW hFE(Min)=100 @Vce=-1V,Ic=-10mA

NPN