Triode/MOS tube/transistor/module

8205 double N-channel MOS transistor, 20V/6A, 18 milliohm low resistance product.

N-channel, Vce=650V, Ic=75A

N-channel, 12V, 4A, 0.026Ω@4.5V

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Triode Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 305V Collector Current (Ic): 200mA Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 100@10mA,10V 100-300 NPN ,Vceo=305V,Ic=200mA silk screen 1D

N-channel, 900V, 20A, 0.21Ω@10V

NPN, Vceo=60V, Ic=3A, hfe=100~200