Triode/MOS tube/transistor/module

NPN+PNP, Vceo=45V, Ic=100mA, hfe=200~450

MOS, SOP-8, P-channel, -30V, -5.3A, 60mΩ (Max), 2.5W

MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 0.3A Power (Pd): 0.35W On-resistance (RDS(on)@Vgs,Id): 1.2mΩ@10V ,0.2A threshold voltage (Vgs(th)@Id): 0.8V-1.6V@250uA

N-channel, 200V, 18A

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a monolithic bias network consisting of a single transistor and two resistors. Series base resistor and base resistor. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.

N-channel, 60V, 25A, 28mΩ@10V

P-channel, -20V, -4.3A, 54mΩ@-4.5V

This Darlington bipolar power transistor is suitable for general power supply and switching, such as output and driver stages in switching regulators, converters, and power amplifier applications. MJD112 (NPN) and MJD117 (PNP) are complementary devices.