Triode/MOS tube/transistor/module
Infineon (Infineon)
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P-channel, 30V, 2.3A, 165mΩ@2.3A, 10V
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DIODES (US and Taiwan)
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TECH PUBLIC (Taizhou)
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DIODES (US and Taiwan)
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UMW (Friends Taiwan Semiconductor)
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This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
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MOS tube type: 2 N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 280mW On-resistance (RDS(on)@Vgs,Id): 1.2Ω@10V ,300mA
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SPS (American source core)
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LONTEN (Longteng Semiconductor)
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LONTEN (Longteng Semiconductor)
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