Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
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Infineon (Infineon)
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N-channel, 55V, 169A, 5.3mΩ@10V
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N+P dual channel, 30V/6A(-30V/-6.5A)
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NCE (Wuxi New Clean Energy)
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NCE (Wuxi New Clean Energy)
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APM (Jonway Microelectronics)
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ST (STMicroelectronics)
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ST (STMicroelectronics)
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ST (STMicroelectronics)
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CJ (Jiangsu Changdian/Changjing)
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RealChip (Shenxin Semiconductor)
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BL (Shanghai Belling)
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This NPN transistor is suitable for general purpose amplifier applications. This device features SOT-723 encapsulation and is suitable for low power surface mount applications where board space is at a premium.
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AGM-Semi (core control source)
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DIODES (US and Taiwan)
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