Triode/MOS tube/transistor/module

N channel

MOS, TO-252, N-channel, 60V, 80A, 6.8mΩ (Max), 150W

The NSVJ6904DSB6 is a compound type JFET for compact size and high efficiency applications, achieving high gain performance. The device is AEC-Q101 qualified and qualified under the Production Part Approval Process (PPAP) for automotive applications.

The NSVJ6904DSB6 is a compound type JFET for compact size and high efficiency applications, achieving high gain performance. The device is AEC-Q101 qualified and qualified under the Production Part Approval Process (PPAP) for automotive applications.

PNP, Vceo=160V, Ic=1.5A

Configuration Single Type N-Ch VDS(V) 200 VGS(V) 20 ID(A)Max. 20 VGS(th)(v) 3 RDS(ON)(m?)@4.502V - Qg(nC)@4.5V - QgS(nC) 5.5 Qgd(nC) 75 Ciss(pF) 1318 Coss(pF) 180 Crss(pF) 75

N channel

This device is suitable for general purpose amplifier applications with 300 mA collector current. From Process 10.

Power MOSFET, 30 V, 136A, 2.1 mΩ, Single N-Channel, SO?8FL

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 6.2A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 19.4mΩ@4.5V, 4A