Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -90 VGS(th)(v) -1.85 RDS(ON)(m?)@4.240V 13 Qg(nC) @4.5V - QgS(nC) 12 Qgd(nC) 32 Ciss(pF) 4066 Coss(pF) 501 Crss(pF) 291

Gear position: 100-200

N channel

Voltage VDSS30V, current ID100A

MOS tube, DFN-8 5*6, N channel, withstand voltage: 80V, current: 100A

Motor drive module IGBT 35A, 600V

-

P-channel, -60V, -30A, 61mΩ@-10V

This N-channel MOSFET is designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

P-channel, -100V, -18A, 100mΩ@-10V