Triode/MOS tube/transistor/module

Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 18mΩ ID(A) 25A

N-channel 50V 0.3A

N-channel, 60V, 2.3A, 0.15Ω@10V

MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 313mW On-resistance (RDS(on)@Vgs,Id): 1.2Ω@10V, 300mA

N-channel, 650V, 7.3A, 0.6Ω@10V

MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 4.1/4.8 Continuous Drain Current ID (A) 80

PNP, 400V, 200mA

Type N Drain-Source Voltage (Vdss) 120 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 7 Input Capacitance (Ciss) 3510 Reverse Transfer Capacitance Crss(pF) 7 Gate Charge (Qg) 45