Triode/MOS tube/transistor/module

NPN,60V,4A

P-channel, -100V, -1A, 600mΩ@-10V

N-channel, 60V, 2.6A, 100mΩ@10V

NPN, Vceo=45V, Ic=0.5A, hfe=100~250

N-channel, 20V, 6A, 17mΩ@4.5V

Three-quadrant bidirectional thyristor On-state RMS current IT(RMS): 25A, Off-state repetitive peak voltage VDRM/VRRM: 800V, On-state voltage drop VTM: 1.55V, Gate trigger current Igt3<50mA