Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

N-channel, 40V, 90A, 3.6mΩ@10V

Field effect configuration: N+P channel N: VDSS withstand voltage 40V, ID current 15A, RDS(ON) on-resistance 30mR@VGS 10V(MAX), VGS(th) turn-on voltage 1 to 2.5V, P: VDSS withstand Voltage -40V, ID current -12A, RDS(ON) on-resistance 45mR@VGS -10V(MAX), VGS(th) on-voltage -1.5V to -2.5V