Triode/MOS tube/transistor/module

NPN,Vceo=40V,Ic=600mA

N+P channel

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This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

N-channel, 600V, 7A, 1.2Ω@10V

This single N-channel MOSFET is designed using an advanced Power Trench process to optimize RDS(ON) @ VGS = 2.5V.